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High Bandwidth Memory : ウィキペディア英語版
High Bandwidth Memory

High Bandwidth Memory (HBM) is a high-performance RAM interface for 3D-stacked DRAM memory from AMD and Hynix. It is to be used in conjunction with high-performance graphics accelerators and network devices.〔(ISSCC 2014 Trends ) page 118 "High-Bandwidth DRAM"〕 The competing technology is the incompatible Hybrid Memory Cube interface from Micron Technology.〔(Where Are DRAM Interfaces Headed? ) // EETimes, 4/18/2014 "''The Hybrid Memory Cube (HMC) and a competing technology called High-Bandwidth Memory (HBM) are aimed at computing and networking applications. These approaches stack multiple DRAM chips atop a logic chip.''"〕 The first devices to use HBM are the AMD Fiji GPU as well as AMD Arctic Islands-based and Nvidia Pascal-based GPUs.
High Bandwidth Memory has been adopted by JEDEC as an industry standard in October 2013.〔(HIGH BANDWIDTH MEMORY (HBM) DRAM (JESD235) ), JEDEC, October 2013〕
== History ==

The development of High Bandwidth Memory began at AMD in 2008 to solve the problem of ever increasing power usage and form factor of computer memory. Amongst other things AMD developed procedures to solve the die stacking problems with a team led by Senior AMD Fellow Bryan Black. Partners from the memory industry (SK Hynix), interposer industry (UMC) and packaging industry (Amkor Technology and ASE) were obtained to help AMD realize their vision of HBM.〔() High-Bandwidth Memory (HBM) from AMD: Making Beautiful Memory〕 High volume manufacturing began at a Hynix facility in Icheon, Korea in 2015.
HBM has been adopted as industry standard JESD235 by JEDEC as of October 2013 following a proposal by AMD and SK Hynix in 2010.〔 The first chip utilizing HBM is AMD Fiji which was released on June 24, 2015 powering the AMD Radeon R9 Fury X.〔() AMD Ushers in a New Era of PC Gaming including World’s First Graphics Family with Revolutionary HBM Technology〕

抄文引用元・出典: フリー百科事典『 ウィキペディア(Wikipedia)
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